• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A semicomductor device comprises a body of amorphous silicon fabricated by a glow discharge in silane, and a metallic region on a surface of said body providing a surface barrier junction at the interface of said metallic region and said body which is capable of generating a space charge region in said body.
    公开号:SU1405712A3
    申请号:SU762385707
    申请日:1976-07-27
    公开日:1988-06-23
    发明作者:Эмиль Карлсон Дэвид
    申请人:Ркакорпорейшн (Фирма)；
    IPC主号:
    专利说明:

    (21) 2385707 / 24-25
    (22) 07.27.76
    (31) 599588
    (32) 07.28.75
    (33) US
    (46) 06.23.88. Bul No. 23
    (71) Assembly (US)
    (72) David Emil Carlson (US)
    (53) 621.382 (088.8)
    (56) Chu F.I. IEEE Photovolt.- Specialists Couf Scott, 1975, No. 4, 1975, p. 303-305.
    W.Angerzon an et al. An 8% Efficient layered. Sohottky. I. Appl. Phys. Barrier sdlarcell, 1974, 45, No. 9, p. 3913-3915.
    (54) SEMICONDUCTOR DEVICE
    (57) The invention relates to semiconductor devices, such as photovoltaic cells, or current rectifying devices. The aim of the invention is to increase conversion efficiency and reduce production costs. The amorphous crust active region produced by a glow discharge in a silane on a substrate has ideal characteristics suitable for an active region of a galvanizing device .. The life expectancy of carriers in amorphous silicon produced by a glow discharge in a silane is greater than about 10 s in While the life span of carriers in amorphous silicon, formed by means of crosslinking or evaporation, is on the order of. Since the mobility of electrons and holes in amorphous silicon produced by a glow discharge is higher, it is possible to obtain greater current-discharge efficiencies. The average density of localized states in the band gap of amorphous silicon is no more than 10 / cm. The absorption of light by amorphous silicon produced by a glow discharge exceeds the absorption of light by single-crystal silicon in the entire visible range of light, i.e. from 4000 to 7000A. The active region of amorphous silicon obtained by a glow discharge can be 10 times thinner than monocrystalline silicon and provide a comparable absorption of light in the visible diaphase. As a consequence, the thickness of the active region is 1 µm or less and provides good device efficiency. 1 il.
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    This invention relates to semiconductor yCTpoficTBaMj to photovoltaic and current rectifying devices, the active area of which is amorphous silicon 5 produced by a glow discharge in silane.
    The purpose of the invention is to increase conversion efficiency and reduce production costs.
    The drawing shows a semiconductor photovoltaic device.
    The photovoltaic device contains a substrate 1 of a material that has both properties of good electrical conductivity and the ability to make non-contacting contact with amorphous silicon deposited by a glow discharge. Typically, metal, such as aluminum, antimony, stainless steel or single crystal, or polycrystalline silicon with a large admixture, is used as the substrate 1. On the surface of the substrate 1 is an active region 2 of amorphous silicon.
    On the surface of the active region 2 on the opposite side of the substrate, there is a metallic region of 3s which is translucent to solar radiation and is a metallic material with good electrical conductivity such as gold, platinum, palladium or chromium. The metal region 3 may be a single metal layer or may be multi-layered. If the metaplastic region 3 is multi-layered, the first layer may be platinum on the active region 2, designed to provide a high Schottky barrier, and the second layer on the first platinum layer may be gold or silver to ensure good electrical conductivity. Since the metal region 3 is a metal such as gold, platinum, palladium or chromium, its thickness should be only about 100 A in order to be translucent for solar radiation.
    On the surface of the metal layer 3, there is an electrode of the grid 4. Typically, the electrode of the grid 4 is a metal with good electrical conductivity. The grid electrode 4 occupies only a small area on the surface of the metal layer 3, since solar radiation incident on the grid electrode 4 can be reflected back from the active region 2. The purpose of the grid electrode 4 is to ensure a uniform current collection from the metal layer 3 .
    o The grid electrode also provides a low series resistance of the device when it works as a circuit element.
    On the electrode of the grid 4 and on the surface of the metal layer 3, not occupied by that element: by the electrode of the grid 4, there is an anti-thrusting layer 5. The latter has a surface of 6 incidence, on which solar radiation falls.
    0 In the process of making a photovoltaic device, a substrate, such as aluminum, is placed on a heating plate, in a vacuum chamber and connected to a negative terminal of an energy source.
    Then the vacuum chamber is pumped out to a pressure of the order of 0.5-1.0 / x10 Torr, and the substrate is heated to 150-400 seconds. Silane is admitted to the vacuum chamber.
    0 SiH under pressure of 0.1-3.0 Torr and as a result, the substrate temperature rises to a value of 200-500 ° C. In order to ensure non-contacting contact between the substrate and the active region, the EU, the latter should be applied5
    five
    0
    five
    on the substrate at a temperature higher in order to ensure the formation of eutectic between the aluminum substrate and the active region of amorphous silicon.
    To apply the active layer, the potential difference between the anode and the substrate must be such that it is dense; The current density on the substrate surface was in the range of 0.3-3.0 mA / cm. The rate of deposition of amorphous silicon increases with increasing sipan vapor pressure and current density. Under the conditions described, deposition of 1 micron of amorphous silicon occurs in less than 5 minutes. The substrate temperature is maintained above 350 ° C and promotes the pyrolytic decomposition of supported silicon hydrides.
    After deposition of amorphous silicon, a metal layer, a grid electrode and an antireflection layer are deposited on the substrate with the active layer by evaporation. The whole process can be performed by a single system.
    The use of amorphous silicon produced by a glow discharge in the active region of photovoltaic devices and photo cells provides a device with a thinner active region than a device of the same basic structure, but from monocrystaplicic silicon. In addition, devices that use amorphous silicon, obtained by glowing discharge, are capable of absorbing solar radiation, comparable to the absorption of solar radiation by photovoltaic devices and monocrystalline silicon photocells having active regions 10 times thicker.
    Thus, an advantage of the invention is to reduce the cost obtained by using a thinner active area. In addition, it also reduces the cost of generating electrical energy from solar radiation, according to I and I I I
    the fact that in the manufacture of the proposed devices, consumes less energy, since the manufacture is carried out at lower temperatures than the manufacture of single-crystal devices.
    权利要求:
    Claims (1)
    [1]
    Invention Formula
    A semiconductor device for converting light energy into electrical energy, containing a silicon core on an electrically conductive substrate with an ohmic, combined with an electrically conductive substrate, and rectifying contacts, characterized in that, in order to increase the conversion efficiency and reduce production costs, it is active the zone is made of hydrogenated amorphous silicon, the average density of localized states in the band gap of which is no more than 10 per 1 cm, the electron mobility is at least 10 cm / s-V, and the time carrier lifetime of not less than 10 seconds.
    类似技术:
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    US4956023A|1990-09-11|Integrated solar cell device
    SU1405712A3|1988-06-23|Semiconductor device
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    引用文献:
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    RU2477905C1|2011-09-15|2013-03-20|Виктор Анатольевич Капитанов|Thin-film photovoltaic silicon converter|
    RU2501121C2|2008-08-19|2013-12-10|Тел Солар Аг|Photocell and method of making photocell|
    RU2657349C2|2016-10-04|2018-06-13|Викторс Николаевич Гавриловс|Method of increasing efficiency of converting energy of absorbed flux of electromagnetic waves of sunlight into electric energy with the help of created "dark current" and volume ultrasonic grating in silicon monocrystal as the result of excitation of periodic high-frequency ultrasonic shear waves in it|JPS5414848B2|1975-02-05|1979-06-11|JPS60245184A|1984-05-18|1985-12-04|Matsushita Electric Ind Co Ltd|Photoelectric converter|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    US59958875A| true| 1975-07-28|1975-07-28|
    KR7601783A|KR810001312B1|1975-07-28|1976-07-22|Semiconductor device having a body of amorphous silicon|
    KR1019800002296A|KR810001314B1|1975-07-28|1980-06-11|Semiconductor device having a body of amorphous silicon|
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